? 2013 ixys corporation, all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c - 100 v v dgr t j = 25 c to 150 c, r gs = 1m - 100 v v gss continuous 15 v v gsm transient 25 v i d25 t c = 25 c - 76 a i dm t c = 25 c, pulse width limited by t jm - 230 a i a t c = 25 c - 38 a e as t c = 25 c1j p d t c = 25 c 298 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c m d mounting torque (to-220 & to-247) 1.13 /10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100024b(01/13) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = - 250 a -100 v v gs(th) v ds = v gs , i d = - 250 a - 2.0 - 4.0 v i gss v gs = 15v, v ds = 0v 100 na i dss v ds = v dss , v gs = 0v - 15 a t j = 125 c - 750 a r ds(on) v gs = -10v, i d = 0.5 ? i d25 , note 1 25 m trenchp tm power mosfets p-channel enhancement mode avalanche rated ixta76p10t IXTP76P10T ixth76p10t v dss = - 100v i d25 = - 76a r ds(on) 25 m features z international standard packages z avalanche rated z extended fbsoa z fast intrinsic diode z low r ds(on) and q g advantages z easy to mount z space savings z high power density applications z high-side switching z push pull amplifiers z dc choppers z automatic test equipment z current regulators z battery charger applications g = gate d = drain s = source tab = drain to-247 (ixth) g s d d (tab) to-263 aa (ixta) g s d (tab) g d s to-220ab (ixtp) d (tab) d s g
ixys reserves the right to change limits, test conditions, and dimensions. ixta76p10t IXTP76P10T ixth76p10t ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 note 1: pulse test, t 300 s, duty cycle, d 2%. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = -10v, i d = 0.5 ? i d25 , note 1 35 58 s c iss 13.7 nf c oss v gs = 0v, v ds = - 25v, f = 1mhz 890 pf c rss 275 pf t d(on) 25 ns t r 40 ns t d(off) 52 ns t f 20 ns q g(on) 197 nc q gs v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 65 nc q gd 65 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v - 76 a i sm repetitive, pulse width limited by t jm - 304 a v sd i f = - 38a, v gs = 0v, note 1 -1.3 v t rr 70 ns q rm 215 nc i rm - 6 a resistive switching times v gs = -10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 1 (external) i f = - 38a, -di/dt = -100a/ s v r = - 50v, v gs = 0v to-247 outline pins: 1 - gate 2 - drain 3 - source to-220 outline pins: 1 - gate 2 - drain 3 - source to-263 outline pins: 1 - gate 2,4 - drain 3 - source
? 2013 ixys corporation, all rights reserved ixta76p10t IXTP76P10T ixth76p10t fig. 1. output characteristics @ t j = 25oc -80 -70 -60 -50 -40 -30 -20 -10 0 -2 -1.8 -1.6 -1.4 -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 5 v - 6 v - 7 v fig. 2. extended output characteristics @ t j = 25oc -280 -240 -200 -160 -120 -80 -40 0 -30 -25 -20 -15 -10 -5 0 v ds - volts i d - amperes v gs = -10v - 5 v - 6 v - 7 v - 8 v - 9 v fig. 3. output characteristics @ t j = 125oc -80 -70 -60 -50 -40 -30 -20 -10 0 -3.2 -2.8 -2.4 -2 -1.6 -1.2 -0.8 -0.4 0 v ds - volts i d - amperes v gs = -10v - 9v - 8v - 7v - 6v - 5v fig. 4. r ds(on) normalized to i d = - 38a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = -10v i d = - 76a i d = - 38a fig. 5. r ds(on) normalized to i d = - 38a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -240 -200 -160 -120 -80 -40 0 i d - amperes r ds(on) - normalized v gs = -10v t j = 25oc t j = 125oc fig. 6. maximum drain current vs. case temperature -80 -70 -60 -50 -40 -30 -20 -10 0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixta76p10t IXTP76P10T ixth76p10t fig. 7. input admittance -140 -120 -100 -80 -60 -40 -20 0 -7.0 -6.5 -6.0 -5.5 -5.0 -4.5 -4.0 -3.5 -3.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 20 40 60 80 100 -160 -140 -120 -100 -80 -60 -40 -20 0 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode -240 -200 -160 -120 -80 -40 0 -1.5 -1.4 -1.3 -1.2 -1.1 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v gs - volts v ds = - 50v i d = - 38a i g = -1ma fig. 11. capacitance 100 1,000 10,000 100,000 -40 -35 -30 -25 -20 -15 -10 -5 0 v ds - volts capacitance - picofarads f = 1 mh z c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc - - - --- - 100ms
? 2013 ixys corporation, all rights reserved ixta76p10t IXTP76P10T ixth76p10t fig. 14. resistive turn-on rise time vs. drain current 20 24 28 32 36 40 44 -76 -72 -68 -64 -60 -56 -52 -48 -44 -40 -36 i d - amperes t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v t j = 25oc t j = 125oc fig. 15. resistive turn-on switching times vs. gate resistance 0 40 80 120 160 200 0 2 4 6 8 101214161820 r g - ohms t r - nanoseconds 10 30 50 70 90 110 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 76a, - 38a fig. 16. resistive turn-off switching times vs. junction temperature 16 17 18 19 20 21 22 23 24 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 35 40 45 50 55 60 65 70 75 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v i d = - 38a i d = - 76a fig. 17. resistive turn-off switching times vs. drain current 34 38 42 46 50 54 58 62 66 -76 -72 -68 -64 -60 -56 -52 -48 -44 -40 -36 i d - amperes t f - nanoseconds 16 17 18 19 20 21 22 23 24 t d(off) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = -10v v ds = - 50v t j = 125oc, 25oc fig. 13. resistive turn-on rise time vs. junction temperature 20 24 28 32 36 40 44 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = -10v v ds = - 50v i d = - 38a i d = - 76a fig. 18. resistive turn-off switching times vs. gate resistance 0 40 80 120 160 200 0 2 4 6 8 101214161820 r g - ohms t f - nanoseconds 0 60 120 180 240 300 t d(off) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = -10v v ds = - 50v i d = - 38a, - 76a
ixys reserves the right to change limits, test conditions, and dimensions. ixta76p10t IXTP76P10T ixth76p10t ixys ref: t_76p10t(a6)11-08-10-a fig. 19. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
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